Thermal Management of High Power GaN-HEMTs by Surface Activated Bonding of SiC/Diamond

Fujitsu Ltd. has developed a unique technology for the surface activated bonding (SAB) of a single-crystal diamond to a SiC substrate at room-temperature (RT) for high-efficiency cooling of high-power GaN high electron mobility transistors (GaN-HEMTs). This technology is expected to expand the